ZXT13P20DE6_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – PNP LOW SATURATION SWITCHING TRANSISTOR

ZXT13P20DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
t(on)
t(off)
Min Typ
-25 -55
-20 -50
-7.5 -8.5






300 500
300 450
150 250
10


-10
 -100
 -165





90

62
 95
 395
Note: 9. Measured under pulsed conditions; pulse width  300μs, duty cycle  2%.
Max



-100
-100
-100

900


-15
-130
-250
-1.1
-0.9




Unit
Test Condition
V I_C = -100μA
V I_C = -10mA
V I_E = -100μA
nA V_CB = -20V
nA V_EB = -6V
nA V_CES = -20V
 I_C = -10mA, V_CE = -2V
 I_C = -1A, V_CE = -2V
 I_C = -3.5A, V_CE = -2V
 I_C = -10A, V_CE = -2V
IC = -100mA, IB = -10mA
mV I_C = -1A, I_B = -10mA
IC = -3.5A, IB = -350mA
V I_C = -3.5A, I_B = -350mA
V I_C = -3.5A, V_CE = -2V
MHz
pF
ns
ns
VCE = -10V, IC = -50mA, f = 50MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -2A
IB1 = IB2 = -40mA
ZXT13P20DE6
Document Number: DS33638 Rev. 4 - 2
4 of 7
www.diodes.com
October 2015
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