ZXT13P20DE6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26

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Diodes Incorporated
ZXT13P20DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol Min
BVCBO
-25
BVCEO
-20
BVEBO
-7.5
ICBO

IEBO

ICES

300
300
hFE
150
10

VCE(sat)


VBE(sat)

VBE(on)

fT

Cobo

t(on)

t(off)

Note: 9. Measured under pulsed conditions; pulse width ≤ 300µs, duty cycle ≤ 2%.
Typ
-55
-50
-8.5



500
450
250

-10
-100
-165


90
62
95
395
Max



-100
-100
-100

900


-15
-130
-250
-1.1
-0.9




Unit
Test Condition
V I_C = -100µA
V I_C = -10mA
V I_E = -100µA
nA V_CB = -20V
nA V_EB = -6V
nA V_CES = -20V
 I_C = -10mA, V_CE = -2V
 I_C = -1A, V_CE = -2V
 I_C = -3.5A, V_CE = -2V
 I_C = -10A, V_CE = -2V
IC = -100mA, IB = -10mA
mV I_C = -1A, I_B = -10mA
IC = -3.5A, IB = -350mA
V I_C = -3.5A, I_B = -350mA
V I_C = -3.5A, V_CE = -2V
MHz
pF
ns
ns
VCE = -10V, IC = -50mA, f = 50MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -2A
IB1 = IB2 = -40mA
ZXT13P20DE6
Document Number: DS33638 Rev: 3 - 2
4 of 7
www.diodes.com
March 2015
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