ZXT13N20DE6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – NPN LOW SATURATION SWITCHING TRANSISTOR

ZXT13N20DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol Min
BVCBO
50
BVCEO
20
BVEBO 7.5
ICBO
—
IEBO
—
ICES
—
250
300
hFE
200
15
—
VCE(sat)
—
—
VBE(on)
—
fT
—
Cobo
—
t(on)
—
t(off)
—
Typ
100
33
8.5
—
—
—
400
450
300
45
5
55
170
0.85
96
50
115
485
Note: 9. Measured under pulsed conditions. Pulse width  300μs. Duty cycle  2%.
Max
—
—
—
100
100
100
—
900
—
—
8
75
230
0.90
—
—
—
—
Unit
Test Condition
V I_C = 100µA
V I_C = 10mA
V I_E = 100µA
nA V_CB = 40V
nA V_EB = 6V
nA V_CES = 40V
IC = 10mA, VCE = 2V
— ^{IC = 1A, VCE = 2V}
IC = 5A, VCE = 2V
IC = 15A, VCE = 2V
IC = 100mA, IB = 10mA
mV I_C = 1A, I_B = 10mA
IC = 4.5A, IB = 45mA
V I_C = 4.5A, V_CE = 2V
MHz
pF
ns
ns
VCE = 10V, IC = 50mA, f = 50MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 2A
IB1 = IB2 = 40mA
ZXT13N20DE6
Document Number: DS33635 Rev. 2 - 2
4 of 7
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October 2015
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