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| ZXT13N20DE6 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT13N20DE6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 50
100
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 20
33
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 7.5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
250
Ratio
300
200
15
Transition Frequency
fT
8.5
100
100
100
5.0 8
55
75
170
230
0.9
1.0
0.85 0.90
400
450
900
300
45
96
V
nA
nA
nA
mV
mV
mV
V
V
MHz
IE=100â®A
VCB=40V
VEB=6V
VCES=40V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=4.5A, IB=45mA*
IC=4.5A, IB=45mA*
IC=4.5A, VCE=2V*
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=5A, VCE=2V*
IC=15A, VCE=2V*
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
50
Turn-On Time
t(on)
115
Turn-Off Time
t(off)
485
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=10V, f=1MHz
ns
VCC=10V, IC=2A
IB1=IB2=40mA
ns
ISSUE 1 - DECEMBER 1999
4
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