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ZXT13N15DE6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – NPN LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT13N15DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol Min
Typ
BVCBO
40
85
BVCEO
15
22
BVEBO 7.5
8.5
ICBO
â
â
IEBO
â
â
ICES
â
â
250
400
300
450
hFE
200
300
20
50
â
5
â
45
VCE(sat)
â
130
â
145
VBE(sat)
â
â
VBE(on)
â
â
fT
â
72
Cobo
â
76
t(on)
â
92
t(off)
â
340
Note: 9. Measured under pulsed conditions. Pulse width ï£ 300μs. Duty cycle ï£ 2%.
Max
â
â
â
100
100
100
â
900
â
â
8
70
190
200
1
0.9
â
â
â
â
Unit
Test Condition
V IC = 100µA
V IC = 10mA
V IE = 100µA
nA VCB = 32V
nA VEB = 6V
nA VCES = 32V
IC = 10mA, VCE = 2V
â IC = 1A, VCE = 2V
IC = 5A, VCE = 2V
IC = 15A, VCE = 2V
IC = 100mA, IB = 10mA
mV IC = 1A, IB = 10mA
IC = 4A, IB = 40mA
IC = 5A, IB = 100mA
V IC = 5A, IB = 100mA
V IC = 5A, VCE = 2V
MHz
pF
ns
ns
VCE = 10V, IC = 50mA, f = 50MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 3A
IB1 = IB2 = 60mA
ZXT13N15DE6
Document Number: DS33634 Rev. 2 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated
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