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| ZXT12N50DX Datasheet, PDF (4/6 Pages) Zetex Semiconductors – DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT12N50DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 100
200
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 50
65
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 7.5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
250
Ratio
300
150
50
Transition Frequency
fT
8.5
100
100
100
11
13
95
120
190
250
135
175
0.9 0.95
0.83 0.9
400
450
900
250
100
132
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
IE=100â®A
VCB=80V
VEB=6V
VCES=80V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
IC=3A, IB=300mA*
IC=3A, IB=50mA*
IC=3A, VCE=2V*
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
26
Turn-On Time
t(on)
115
Turn-Off Time
t(off)
1000
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=10V, f=1MHz
ns
VCC=10V, IC=1A
IB1=IB2=20mA
ns
ISSUE 1 - MARCH 2000
4
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