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| ZXT11N20DF Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V NPN SILICON LOW SATURATION TRANSISTOR | |||
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ZXT11N20DF
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 40
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 20
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 7.5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
200
Ratio
300
250
150
100
Transition Frequency
fT
100
100
100
7
12
65
100
40
60
90
130
0.9 1.0
0.85 1.0
900
160
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
IE=100â®A
VCB=32V
VEB=6V
VCES=32V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=1A, IB=100mA*
IC=2.5A, IB=250mA*
IC=2.5A, IB=250mA*
IC=2.5A, VCE=2V*
IC=10mA, VCE=2V*
IC=100mA, VCE=2V*
IC=1A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
20
Turn-On Time
t(on)
122
Turn-Off Time
t(off)
295
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=10V, f=1MHz
ns
VCC=10V, IC=2A
IB1=IB2=20mA
ns
ISSUE 1 - DECEMBER 1999
4
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