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| ZXT11N15DF Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 15V NPN SILICON LOW SATURATION TRANSISTOR | |||
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ZXT11N15DF
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 40
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 15
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 7.5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
200
Ratio
300
250
200
150
Transition Frequency
fT
100
100
100
7
10
57
80
37
55
110
150
0.9 1.0
0.85 1.0
900
145
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
IE=100â®A
VCB=32V
VEB=6V
VCES=32V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=1A, IB=100mA*
IC=3A, IB=150mA*
IC=3A, IB=150mA*
IC=3A, VCE=2V*
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=1A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
26
Turn-On Time
t(on)
110
Turn-Off Time
t(off)
220
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
pF
VCB=10V, f=1MHz
ns
VCC=10V, IC=3A
IB1=IB2=30mA
ns
ISSUE 1 - DECEMBER 1999
4
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