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| ZXT10P20DE6 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT10P20DE6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -20
-65
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO -20
-53
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
300
Ratio
300
150
15
Transition Frequency
fT
150
-8.8
-100
-100
-100
-19
-170
-190
-240
-30
-220
-250
-350
-0.97 -1.05
-0.85 -0.95
475
450
230
30
180
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
IE=-100â®A
VCB=-15V
VEB=-4V
VCES=-15V
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-20mA*
IC=-1.5A, IB=-50mA*
IC=-2.5A, IB=-150mA*
IC=-2.5A, IB=-150mA*
IC=-2.5A, VCE=-2V*
IC=-10mA, VCE=-2V*
IC=-0.1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
21
30
pF
VCB=-10V, f=1MHz
Turn-On Time
Turn-Off Time
t(on)
t(off)
40
ns
VCC=-10V, IC=-1A
IB1=IB2=-20mA
670
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 1 - SEPTEMBER 2000
4
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