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| ZXT10N50DE6 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXT10N50DE6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 50
190
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO 50
65
V
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
200
Ratio
300
200
100
Transition Frequency
fT
100
8.3
100
100
100
14 20
145 200
115 200
225 300
0.93 1.0
0.88 0.95
400
450
400
225
40
165
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
IE=100â®A
VCB=40V
VEB=4V
VCES=40V
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=2A, IB=50mA*
IC=3A, IB=100mA*
IC=3A, IB=100mA*
IC=3A, VCE=2V*
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
12
20
pF
VCB=10V, f=1MHz
Turn-On Time
Turn-Off Time
t(on)
t(off)
170
ns
VCC=10V, IC=1A
IB1=IB2=10mA
750
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 1 - SEPTEMBER 2000
4
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