ZXMP10A18G_15 Datasheet, PDF (4/8 Pages) Diodes Incorporated – 100V P-CHANNEL ENHANCEMENT MODE MOSFET

Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol Min
Typ
BVDSS
-100

IDSS


IGSS


VGS(th)
-2.0

Static Drain-Source On-Resistance (Note 9)
RDS (ON)


Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
gfs
VSD
trr
Qrr
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf

6.0

-0.85

49

107

1055

90

76

26.9

3.9

10.2

4.6

6.8

33.9

17.9
Notes:
9. Measured under pulsed conditions. Pulse width  300s; duty cycle  2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
A Product Line of
Diodes Incorporated
ZXMP10A18G
Max

-1
100
-4.0
150
190

-0.95












Unit
Test Condition
V I_D = -250µA, V_GS = 0V
µA V_DS = -100V, V_GS = 0V
nA V_GS = 20V, V_DS = 0V
V
ID = -250µA, VDS = VGS
mΩ ^{VGS = -10V, ID = -2.8A}
VGS = -6V, ID = -2.4A
S V_DS = -15V, I_D = -2.8A
V I_S = -3.5A, V_GS = 0V, T_J = +25°C
ns I_S = -2.8A, di/dt = 100A/µs,
nC T_J = +25°C
pF
pF
VDD = -50V, VGS = 0V
f = 1MHz
pF
nC
nC ^{VGS = -10V, VDS = -50V}
nC ^{ID = -2.8A}
ns
ns V_DD = -50V, V_GS = -10V
ns I_D = -1A, R_G  6.0Ω
ns
ZXMP10A18G
Document Number DS33598 Rev. 3 - 2
4 of 8
www.diodes.com
March 2015
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