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| ZXMN3AM832 Datasheet, PDF (4/7 Pages) Zetex Semiconductors – MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Not Recommended for New Design
Please Use ZXMN3AMCTA
ZXMN3AM832
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
Gate-Source Threshold Voltage
VGS(th)
Static Drain-Source On-State Resistance RDS(on)
(1)
Forward Transconductance (1)(3)
gfs
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
MIN.
30
1
TYP.
0.106
3.5
190
38
20
1.7
2.3
6.6
2.9
2.3
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Qg
Qgs
Qgd
VSD
3.9
0.6
0.9
0.84
Reverse Recovery Time (3)
trr
Reverse Recovery Charge (3)
Qrr
17.7
13.0
MAX. UNIT CONDITIONS.
0.5
100
0.12
0.18
V ID=250µA, VGS=0V
µA VDS=30V, VGS=0V
nA VGS=±20V, VDS=0V
V ID=250µA, VDS= VGS
⦠VGS=10V, ID=2.5A
⦠VGS=4.5V, ID=2.0A
S VDS=4.5V,ID=2.5A
pF
pF
VDS=25 V, VGS=0V,
f=1MHz
pF
ns
ns VDD =15V, ID=2.5A
ns RG=6.0â¦, VGS=10V
ns
nC VDS=15V,VGS=5V,
ID=2.5A
nC
nC
VDS=15V,VGS=10V,
ID=2.5A
nC
0.95
V TJ=25°C, IS=1.7A,
VGS=0V
ns TJ=25°C, IF=2.5A,
nC di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width â¤300µs. Duty cycle ⤠2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
4
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