ZXMN3A01F Datasheet, PDF (4/7 Pages) Zetex Semiconductors – 30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN3A01F
ELECTRICAL CHARACTERISTICS (at T_A = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V_(BR)DSS 30
V I_D=250µA, V_GS=0V
Zero Gate Voltage Drain Current
I_DSS
0.5 µA V_DS=30V, V_GS=0V
Gate-Body Leakage
I_GSS
100 nA V_GS=Ϯ20V, V_DS=0V
Gate-Source Threshold Voltage
V_GS(th)
Static Drain-Source On-State Resistance R_DS(on)
(1)
1
V I_D=250µA, V_DS= V_GS
0.106 0.12
0.18
Ω V_GS=10V, I_D=2.5A
Ω V_GS=4.5V, I_D=2.0A
Forward Transconductance (1)(3)
g_fs
3.5
S V_DS=4.5V,I_D=2.5A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
C_iss
C_oss
C_rss
190
pF
V_DS=25 V, V_GS=0V,
38
pF f=1MHz
20
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_g
Q_gs
Q_gd
1.7
ns
2.3
ns _{VDD =15V, ID=2.5A}
6.6
ns ^{RG(6.0Ω, VGS=10V}
2.9
ns
2.3
nC V_DS=15V,V_GS=5V,
I_D=2.5A
3.9
nC
V_DS=15V,V_GS=10V,
0.6
nC I_D=2.5A
0.9
nC
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V_SD
t_rr
Q_rr
0.85 0.95
17.7
13.0
V T_J=25°C, I_S=1.7A,
V_GS=0V
ns T_J=25°C, I_F=2.5A,
di/dt= 100A/µs
nC
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JULY 2002
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