ZXMN10A25G Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 100V SOT223 N-channel enhancement mode MOSFET

ZXMN10A25G
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Static
Drain-source breakdown voltage V_(BR)DSS
Zero gate voltage drain current I_DSS
Gate-body leakage
I_GSS
Gate-source threshold voltage V_GS(th)
Static drain-source on-state
resistance ^(*)
R_DS(on)
Forward transconductance^(*)(‡)
Dynamic^(‡)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching ^{(†) (‡)}
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Total gate charge
Q_g
Gate-source charge
Q_gs
Gate drain charge
Q_gd
Source-drain diode
Diode forward voltage^(*)
V_SD
Reverse recovery time^(‡)
t_rr
Reverse recovery charge^(‡)
Q_rr
Min.
100
2.0
Typ. Max. Unit Conditions
V I_D= 250␮A, V_GS=0V
0.5 ␮A V_DS= 100V, V_GS=0V
100 nA V_GS=±20V, V_DS=0V
4.0
V I_D= 250␮A, V_DS=V_GS
0.125 ⍀ V_GS= 10V, I_D= 2.9A
0.150 ⍀ V_GS= 6V, I_D = 2.6A
7.3
S V_DS= 15V, I_D= 2.9A
859
pF V_DS= 50V, V_GS=0V
57
pF ^f=1MHz
33
pF
4.9
ns V_DD= 50V, I_D= 1A
3.7
ns ^{RG≅6.0⍀, VGS= 10V}
18
ns
9.4
ns
9.6
nC V_DS= 50V, V_GS= 5V
I_D= 2.9A
17
nC V_DS= 50V, V_GS= 10V
3.8
nC ^{ID= 2.9A}
5.4
nC
0.85 0.95
40.5
62
V Tj=25°C, I_S= 4A,
V_GS=0V
ns T_j=25°C, I_S= 2.9A,
nC ^{di/dt=100A/␮s}
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - July 2006
4
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