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| ZXMC3A18DN8_15 Datasheet, PDF (4/12 Pages) Diodes Incorporated – Complementary 30V enhancement mode MOSFET | |||
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ZXMC3A18DN8
N-channel
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Static
Drain-source breakdown
voltage
V(BR)DSS
Zero gate voltage drain current IDSS
Gate-body leakage
IGSS
Gate-source threshold voltage VGS(th)
Static drain-source on-state
resistance (*)
RDS(on)
Forward transconductance(*)(â¡) gfs
Min.
30
1.0
Typ. Max. Unit Conditions
V ID= 250â®A, VGS=0V
0.5 â®A VDS=30V, VGS=0V
100 nA VGS=±20V, VDS=0V
V ID= 250â®A, VDS=VGS
0.025 â VGS= 10V, ID= 5.8A
0.030
VGS= 4.5V, ID= 5.3A
17.5
S VDS= 15V, ID= 5.8A
Dynamic(â¡)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching (â ) (â¡)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Total gate charge
Qg
Gate-source charge
Qgs
Gate drain charge
Qgd
Source-drain diode
Diode forward voltage(*)
VSD
Reverse recovery time(â¡)
trr
Reverse recovery charge(â¡)
Qrr
1800
289
178
pF VDS= 25V, VGS=0V
pF f=1MHz
pF
5.5
8.7
33
8.5
19.4
36
5.5
7.0
ns VDD= 15V, ID= 6A
ns RG â
6.0â, VGS= 10V
ns
ns
nC VDS= 15V, VGS= 5V
ID= 3.5A
nC VDS= 15V, VGS= 10V
nC ID= 3.5A
nC
0.95
20.5
41.5
V Tj=25°C, IS= 6A, VGS=0V
ns Tj=25°C, IS= 6A,
nC di/dt=100A/â®s
NOTES:
(*) Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
(â ) Switching characteristics are independent of operating junction temperature.
(â¡) For design aid only, not subject to production testing.
Issue 2 - September 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com
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