ZXM61P03F_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 30V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXM61P03F
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V_(BR)DSS -30
Zero Gate Voltage Drain Current
I_DSS
Gate-Body Leakage
I_GSS
Gate-Source Threshold Voltage
V_GS(th)
-1.0
Static Drain-Source On-State Resistance (1) R_DS(on)
Forward Transconductance (3)
DYNAMIC (3)
g_fs
0.44
V
-1 µA
Ϯ100 nA
V
0.35 Ω
0.55 Ω
S
I_D=-250µA, V_GS=0V
V_DS=-30V, V_GS=0V
V_GS=Ϯ20V, V_DS=0V
I =-250
D
µA
,
V_DS=
V_GS
V_GS=-10V, I_D=-0.6A
V_GS=-4.5V, I_D=-0.3A
V_DS=-10V,I_D=-0.3A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
C_iss
C_oss
C_rss
140
pF
V_DS=-25 V, V_GS=0V,
45
pF f=1MHz
20
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
1.9
ns
2.9
ns _{VDD =-15V, ID=-0.6A}
8.9
ns
R_G=6.2Ω, R_D=25Ω
(Refer to test circuit)
5.0
ns
4.8 nC
0.62 nC
1.3 nC
V_DS=-24V,V_GS=-10V,
I_D=-0.6A
(Refer to test circuit)
Diode Forward Voltage (1)
V_SD
Reverse Recovery Time (3)
t_rr
Reverse Recovery Charge(3)
Q_rr
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
14.8
7.7
-0.95 V
ns
nC
T_j=25°C, I_S=-0.6A,
V_GS=0V
T_j=25°C, I_F=-0.6A,
di/dt= 100A/µs
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS