ZVN4525G Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 250V N-CHANNEL ENHANCEMENT MODE MOSFET

ZVN4525G
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP.
MAX. UNI CONDITIONS.
T
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
250
0.8
Forward Transconductance (3)
DYNAMIC (3)
g_fs
0.3
285
35
±1
1.4
5.6
5.9
6.4
0.475
500
±100
1.8
8.5
9.0
9.5
V I_D=1mA, V_GS=0V
nA V_DS=250V, V_GS=0V
nA V_GS=±40V, V_DS=0V
V
I =1mA,
D
V_DS=
V_GS
Ω V_GS=10V, I_D=500mA
Ω V_GS=4.5V, I_D=360mA
Ω V_GS=2.4V, I_D=20mA
S V_DS=10V,I_D=0.3A
Input Capacitance
Output Capacitance
C_iss
72
C_oss
11
pF
V_DS=25 V, V_GS=0V,
pF f=1MHz
Reverse Transfer Capacitance
C_rss
3.6
pF
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
1.25
1.70
11.40
3.50
2.6
0.2
0.5
3.65
0.28
0.70
ns
V_DD =30V, I_D=360mA
ns R_G=50Ω, V_GS =10V
(refer to test circuit)
ns
ns
nC
V_DS=25V,V_GS=10V,
nC I_D=360mA(refer to
test circuit)
nC
Diode Forward Voltage (1)
V_SD
0.97
Reverse Recovery Time (3)
t_rr
186
260
Reverse Recovery Charge (3)
Q_rr
34
48
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V T_j=25°C, I_S=360mA,
V_GS=0V
ns T_j=25°C, I_F=360mA,
di/dt= 100A/µs
nC
ISSUE 1 - MARCH 2001
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