TL082 Datasheet, PDF (4/11 Pages) National Semiconductor (TI) – Wide Bandwidth Dual JFET Input Operational Amplifier

TL082
GENERAL PURPOSE JFET INPUT OPERATIONAL
AMPLIFIERS
Electrical Characteristics (V_CC± = ±15V, T_A = 25 ^oC; unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
V_IO Input Offset Voltage
V_O=0,
R_S=50Ω
T_A=25 ^oC
T_A= full range
α_vIO
Temperature Coefficient
of Input Offset Voltage
V_O=0, R_S=50Ω, T_A= full range
I_IO Input Offset Current
I_IB Input Bias Current
V_O=0
V_O=0
T_A=25 ^oC
T_A= full range
T_A=25 ^oC
T_A= full range
V_ICR
Common Mode
Input Voltage Range
±11
R_L=10kΩ, T_A=25 ^oC
±12
V_OM
Maximum Peak
Output Voltage Swing
R_L≧10kΩ,
R_L≧2kΩ
±12
T_A= full range _±10
A_VD
Large Signal Differential ^VO^=±10V,
Voltage Amplification R_L≧2kΩ
T_A=25 ^oC
50
T_A= full range 25
B₁ Unity Gain Bandwidth
r_i Input Resistance
T_A=25 ^oC
CMRR
Common Mode
Rejection Ratio
V_IC=V_ICRmin, V_O=0
R_S=50Ω, T_A=25 ^oC
75
Supply Voltage
V_CC=±9 to ±15V
k_SVR Rejection Ratio
V_O=0
80
(ΔV_CC±/ΔV_IO)
R_S=50Ω, T_A=25 ^oC
I_CC
Supply Current
(each amplifier)
V_O=0, T_A=25 ^oC
No load
V_O1/V_O2 Crosstalk Attenuation A_VD=100, T_A=25 ^oC
V_I=10V, C_L=100pF, _TA=25 ^o_C
8
SR Slew Rate at Unity Gain R_L=2kΩ
(See Figure 1)
T_A= full range 5
Typ.
3
18
5
30
-12~+15
±13.5
±12
200
3
10¹²
86
86
1.4
120
13
tr Rise Time
V_I=20mV, R_L=2kΩ, C_L=100pF
0.05
Overshoot Factor
(See Figure 1)
20
Vn
In
THD
θ_JA
θ_JC
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
Total Harmonic
Distortion
Thermal Resistance
Junction-to-Ambient
Thermal Resistance
Junction-to-Case
R_S=20Ω
f=1kHz
f=10 Hz to 10kHz
R_S=20Ω, f=1kHz
V_Irms=6V, A_VD=1,
R_L≧2kΩ, R_S≦1kΩ,
f=1kHz
SOP-8L (Note 9)
SOP-8L (Note 9)
18
4
0.01
0.003
145
35
Notes: 9. Test condition for SOP-8L: Devices mounted on FR-4 substrate PC board, with minimum recommended pad layout.
Max Unit
6
mV
9
μV/ ^oC
100 pA
10
nA
200 pA
20
nA
V
V
V/mV
MHz
Ω
dB
dB
2.8 mA
dB
V/μs
μs
%
nV ΗΖ
μV
pA HZ
%
o_C/W
o_C/W
TL082 Rev. 1
4 of 11
www.diodes.com
JULY 2009
© Diodes Incorporated