MMBTA55_15 Datasheet, PDF (4/7 Pages) SeCoS Halbleitertechnologie GmbH – Driver Transistor

MMBTA55 / MMBTA56
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Symbol Min
BVCBO
-60
-80
BVCEO
-60
-80
BVEBO
-5.0
ICBO

Collector Cut-Off Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
ICEX

hFE
VCE(SAT)
VBE(SAT)
100


fT
50
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max


-4.0
-100
-100

-0.25
-1.2

Unit
Test Condition
V I_C = -100µA, I_E = 0
V I_C = -1.0mA, I_B = 0
 I_E = -100µA, I_C = 0
nA ^{VCB = -60V, IE = 0}
VCB = -80V, IE = 0
nA ^{VCE = -60V, IBO = 0V}
VCE = -80V, IBO = 0V
 ^{IC = -10mA, VCE = -1.0V}
IC = -100mA, VCE = -1.0V
V I_C = -100mA, I_B = -10mA
V I_C = -100mA, V_CE = -1.0V
MHz
VCE = -1.0V, IC = -100mA,
f = 100MHz
MMBTA55/MMBTA56
Document number: DS30054 Rev. 12 - 2
4 of 7
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May 2015
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