MMBT3906FA Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806

MMBT3906FA
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 8)
DC Current Gain
Symbol Min
BV_CBO
-40
BV_CEO
-40
BV_EBO -6.0
I_CEX

I_CBO

I_BL

60
80
h_FE
100
60
30
Collector-Emitter Saturation Voltage
V_CE(sat)

Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
V_BE(sat)
-0.65

C_obo

C_ibo

h_ie
2.0
h_re
0.1
h_fe
100
h_oe
3.0
Current Gain-Bandwidth Product
f_T
300
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t_d

t_r

t_s

t_f

Note:
8. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
Max



-50
-50
-50


300


-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60

35
35
225
75
Unit
Test Condition
V I_C = -10µA, I_E = 0
V I_C = -1.0mA, I_B = 0
V I_E = -10µA, I_C = 0
nA V_CE = -30V, V_EB(OFF) = -3.0V
nA V_CB = -30V, I_E = 0
nA V_CE = -30V, V_EB(OFF) = -3.0V
I_C = -100µA, V_CE = -1.0V
I_C = -1.0mA, V_CE = -1.0V
 ^{IC = -10mA, VCE = -1.0V}
I_C = -50mA, V_CE = -1.0V
I_C = -100mA, V_CE = -1.0V
V ^{IC = -10mA, IB = -1.0mA}
I_C = -50mA, I_B = -5.0mA
V ^{IC = -10mA, IB = -1.0mA}
I_C =- 50mA, I_B = -5.0mA
pF
pF
k
x 10^-4

µS
MHz
V_CB = -5.0V, f = 1.0MHz, I_E = 0
V_EB = -0.5V, f = 1.0MHz, I_C = 0
V_CE = -10V, I_C = -1.0mA,
f = 1.0kHz
V_CE = -20V, I_C = -10mA,
f = 100MHz
ns _{VCC = -3.0V, IC = -10mA,}
ns VBE(off) = 0.5V, IB1 = -1.0mA
ns _{VCC = -3.0V, IC = -10mA,}
ns IB1 = IB2 = -1.0mA
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
4 of 7
www.diodes.com
July 2013
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