MMBT3904LP_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006

MMBT3904LP
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Symbol Min
BVCBO
60
BVCEO
40
BVEBO
6.0
ICEX

IBL

40
70
hFE
100
60
30
Collector-Emitter Saturation Voltage
VCE(sat)

Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
VBE(sat)
0.65

Cobo

Cibo

hie
1.0
hre
0.5
hfe
100
hoe
1.0
Current Gain-Bandwidth Product
fT
300
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td

tr

ts

tf

Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max



50
50


300


0.20
0.30
0.85
0.95
4.0
8.5
10
8.0
400
40

35
35
200
50
Unit
Test Condition
V I_C = 10µA, I_E = 0
V I_C = 1.0mA, I_B = 0
V I_E = 10µA, I_C = 0
nA V_CE = 30V, V_EB(OFF) = 3.0V
nA V_CE = 30V, V_EB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
 ^{IC = 10mA, VCE = 1.0V}
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
V ^{IC = 10mA, IB = 1.0mA}
IC = 50mA, IB = 5.0mA
V ^{IC = 10mA, IB = 1.0mA}
IC = 50mA, IB = 5.0mA
pF
pF
kΩ
x 10^-4

µS
MHz
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
ns V_CC = 3.0V, I_C = 10mA,
ns V_BE(off) = - 0.5V, I_B1 = 1.0mA
ns V_CC = 3.0V, I_C = 10mA,
ns I_B1 = I_B2 = 1.0mA
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
4 of 7
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May 2015
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