MMBT3904-13-F Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT3904
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Symbol Min
BV_CBO
60
BV_CEO
40
BV_EBO
6.0
I_CEX
⎯
I_BL
⎯
40
70
h_FE
100
60
30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
V_CE(sat)
V_BE(sat)
⎯
0.65
⎯
C_obo
⎯
C_ibo
⎯
h_ie
1.0
h_re
0.5
h_fe
100
h_oe
1.0
f_T
300
Noise Figure
NF
⎯
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t_d
⎯
t_r
⎯
t_s
⎯
t_f
⎯
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
⎯
⎯
⎯
50
50
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0
8.0
10
8.0
400
40
⎯
5.0
35
35
200
50
Unit
Test Condition
V I_C = 10μA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 10μA, I_C = 0
nA V_CE = 30V, V_EB(OFF) = 3.0V
nA V_CE = 30V, V_EB(OFF) = 3.0V
I_C = 100µA, V_CE = 1.0V
I_C = 1.0mA, V_CE = 1.0V
⎯ ^{IC = 10mA, VCE = 1.0V}
I_C = 50mA, V_CE = 1.0V
I_C = 100mA, V_CE = 1.0V
V ^{IC = 10mA, IB = 1.0mA}
I_C = 50mA, I_B = 5.0mA
V ^{IC = 10mA, IB = 1.0mA}
I_C = 50mA, I_B = 5.0mA
pF
pF
kΩ
x 10^-4
⎯
μS
MHz
dB
V_CB = 5.0V, f = 1.0MHz, I_E = 0
V_EB = 0.5V, f = 1.0MHz, I_C = 0
V_CE = 10V, I_C = 1.0mA,
f = 1.0kHz
V_CE = 20V, I_C = 10mA,
f = 100MHz
V_CE = 5.0V, I_C = 100μA,
R_S = 1.0kΩ, f = 1.0kHz
ns V_CC = 3.0V, I_C = 10mA,
ns V_BE(off) = - 0.5V, I_B1 = 1.0mA
ns V_CC = 3.0V, I_C = 10mA,
ns I_B1 = I_B2 = 1.0mA
MMBT3904
Document number: DS30036 Rev. 20 - 2
4 of 7
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August 2012
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