 English |
|
|
|
|
|
|
|
| FZT948 Datasheet, PDF (4/5 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | |||
| |||
| ◁ |
FZT949
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -50 -80
Voltage
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER -50
-80
V
IC=-1µA, RB â¤1kâ¦
Collector-Emitter
Breakdown Voltage
V(BR)CEO -30
-45
V
IC=-10mA*
Emitter-Base Breakdown
V(BR)EBO -6
-8
Voltage
V
IE=-100µA
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
ICER
R â¤1kâ¦
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
-50 nA
-1
µA
-50 nA
-1
µA
-10 nA
-50 -75 mV
-85 -140 mV
-190 -270 mV
-350 -440 mV
-1100 -1250 mV
VCB=-40V
VCB=-40V,
Tamb=100°C
VCB=-40V
VCB=-40V,
Tamb=100°C
VEB=-6V
IC=-0.5A, IB=-20mA*
IC=-1A, IB=-20mA*
IC=-2A, IB=-200mA*
IC=-5.5A, IB=-500mA*
IC=-5.5A, IB=-500mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-900 -1060 mV IC=-5.5A, VCE=-1V*
Static Forward
hFE
Current Transfer Ratio
Transition Frequency
fT
100 200
100 200 300
75
140
35
IC=-10mA, VCE =-1V
IC=-1A, VCE =-1V*
IC=-5A, VCE =-1V*
IC=-20A, VCE =-2V*
100
MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
122
pF
Switching Times
ton
toff
120
ns
130
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
RCE(sat)44m⦠at 4.5A
VCB=-10V, f=1MHz
IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V
TBA
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese