FZT869_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 25V NPN HIGH CURRENT TRANSISTOR IN SOT223

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Diodes Incorporated
FZT869
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Symbol
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Min Typ
60
120
60
120
25
35
6
8










300 450
300 450
200 300
 100

35

67

168






Current Gain-Bandwidth Product (Note 9)
fT

100
Output Capacitance (Note 9)
Switching Times
Cobo
ton
toff

70

60

680
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max




50
1
50
1
10




50
110
215
350
1.2
1.13




Unit
V
V
V
V
nA
µA
nA
µA
nA

mV
V
mV
MHz
pF
ns
Test Condition
IC = 100µA
IC = 1µA, RB ≤ 1kΩ
IC = 10mA
IE = 100µA
VCB = 50V
VCB = 50V, TA = +100°C
VCB = 50V, RB ≤ 1kΩ
VCB = 50V, TA = +100°C
VEB = 6V
IC = 10mA, VCE = 1V
IC = 1A, VCE = 1V
IC = 7A, VCE = 1V
IC = 20A, VCE = 2V
IC = 0.5mA, IB = 10mA
IC = 1A, IB = 10mA
IC = 2A, IB = 10mA
IC = 6.5A, IB = 150mA
IC = 6.5A, IB = 300mA
IC = 6.5A, VCE = 1V
IC = 100mA, VCE = 10V,
f = 50MHz
VCB = 10V, f = 1MHz
IC = 1A, VCC = 10V,
IB1 = -IB2 = 100mA
FZT869
Document Number DS33178 Rev. 3 - 2
4 of 7
www.diodes.com
June 2015
© Diodes Incorporated