FZT792A_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 70V PNP MEDIUM POWER TRANSISTOR IN SOT223

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FZT792A
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
Min Typ
-75 -100
-70
-90
-7
-8.5

<1



<1

-0.30
-0.30

-0.30

-0.80

-0.75
300

250

200

Current Gain-Bandwidth Product
fT
100 160
Turn-On Time
Turn-Off Time
Input Capacitance
Output Capacitance
ton
toff
Cibo
Cobo

35

750

225

25
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max



-100
-10
-100
-0.45
-0.50
-0.50
-0.95

800







Unit
V
V
V
nA
µA
nA
V
V
V

MHz
ns
ns
pF
pF
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -40V
VCB = -40V, Tamb = +100°C
VEB = -4V
IC = -500mA, IB = -5mA
IC = -1A, IB = -25mA
IC = -2A, IB = -200mA
IC = -1A, IB = -25mA
IC = -1A, VCE = -2V
IC = -10mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
VCE = -5V, IC = -50mA
f = 50MHz
VCC = -10V, IC = -500mA
IB1 = IB2 = -50mA
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
FZT792A
Document Number DS33170 Rev. 4 - 2
4 of 7
www.diodes.com
June 2015
© Diodes Incorporated