FZT692BTA Datasheet, PDF (4/7 Pages) Diodes Incorporated – 70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BV_CBO
70
Collector-Emitter Breakdown Voltage (Note 10)
BV_CEO
70
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
BV_EBO
7
I_CBO
—
Collector-Emitter Cutoff Current
Emitter Cutoff Current
I_CES
—
I_EBO
—
DC Current Gain (Note 10)
500
h_FE
400
150
—
Collector-Emitter Saturation Voltage (Note 10)
V_CE(sat)
—
—
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
Input Capacitance
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Turn-Off Time
V_BE(sat)
—
V_BE(on)
—
C_ibo
—
C_obo
—
f_T
150
t_on
—
t_off
—
Note:10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
200
12
—
46
1440
A Product Line of
Diodes Incorporated
FZT692B
Max
—
—
—
100
100
100
—
—
—
0.15
0.5
0.5
0.9
0.9
—
—
—
—
—
Unit
V
V
V
nA
nA
nA
—
V
V
V
pF
pF
MHz
ns
ns
Test Condition
I_C = 100µA
I_C = 10mA
I_E = 100µA
V_CB = 55V
V_CE = 55V
V_EB = 5.6V
I_C = 100mA, V_CE = 2V
I_C = 500mA, V_CE = 2V
I_C = 1A, V_CE = 2V
I_C = 0.1A, I_B = 0.5mA
I_C = 1A, I_B = 10mA
I_C = 2A, I_B = 200mA
I_C = 1A, I_B = 10mA
I_C = 1A, V_CE = 2V
V_EB = 0.5V, f = 1MHz
V_CB = 10V, f = 1MHz
V_CE = 5V, I_C = 50mA, f=50MHz
V_CC = 10V, I_C = 500mA
I_B1 = -I_B2 = 50mA
FZT692B
Document number: DS33157 Rev. 4 - 2
4 of 7
www.diodes.com
December 2013
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