FZT690B_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
45
—
Collector-Emitter Breakdown Voltage (Note 12)
BVCEO
45
—
Emitter-Base Breakdown Voltage
BVEBO
7
—
Collector-Base Cut-Off Current
ICBO
—
—
Emitter Cut-Off Current
IEBO
—
—
DC Current Gain (Note 12)
500
400
hFE
150
50
—
—
—
Collector-Emitter Saturation Voltage (Note 12)
VCE(sat)
—
—
—
—
Base-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
Input Capacitance
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Turn-Off Time
VBE(sat)
—
VBE(on)
—
Cibo
—
Cobo
—
fT
150
ton
—
toff
—
—
—
200
16
—
33
1,300
Note:
12. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Max
—
—
—
0.1
0.1
—
—
—
0.10
0.50
0.9
0.9
—
—
—
—
—
FZT690B
5
Unit
V
V
V
µA
µA
—
V
V
V
pF
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 35V
VEB = 4V
IC = 0.1A, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 3A, VCE = 2V
IC = 0.1A, IB = 0.5mA
IC = 1A, IB = 5mA
IC = 1A, IB = 10mA
IC = 1A, VCE = 2V
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
VCE = 5V, IC = 50mA, f=50MHz
VCC = 10V, IC = 500mA
IB1 = -IB2 = 50mA
FZT690B
Document number: DS33156 Rev. 5 - 2
4 of 7
www.diodes.com
December 2015
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