FMMTA06 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FMMTA0 6
ELECTRICAL CHARACTERISTICS (at T_amb = 25° C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter cut-off current
Collector-base cut-off current
Static forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter turn-on voltage
Transition frequency
SYMBOL
V _(BR)CBO
V _(BR)CEO
V _(BR)EBO
I_CES
I_CBO
H_FE
V _CE(sat)
V _BE(on)
f_T
MIN.
80
80
4
50
50
100
TYP.
120
MAX.
100
100
0.25
1.2
UNIT CONDITIONS
V I_C= 1 mA
V I_C= 1 0 mA*
V I_E= 1 0 0 ␮A
nA V _CES= 6 0 V
nA V _CB= 8 0 V
I_C= 1 0 mA, V _CE= 1 V *
I_C= 1 0 0 mA, V _CE= 1 V *
V I_C= 1 0 0 mA, I_B= 1 0 mA*
V I_C= 0 .1 A, V_CE= 1 V*
I_C= 1 0 mA, V _CE= 2 V ,
f= 1 0 0 MHz
NOTES
* Measured under pulsed conditions. Pulse width= 300␮S. Duty cycle Յ2%
SEMICONDUCTORS
4
ISSUE 2 - MAY 2004