English
Language : 

FMMT723_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V PNP LOW SATURATION TRANSISTOR IN SOT23
A Product Line of
Diodes Incorporated
FMMT723
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 10)
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(on)
VBE(sat)
Cobo
Min
-100
-100
-7
-
-
-
300
300
250
-
-
-
-
-
-
-
-
Transition Frequency
fT
150
Turn-On Time
Turn-Off Time
ton
-
toff
-
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Typ
-200
-160
-8.8
<1
<1
<1
475
450
375
250
30
-50
-125
-210
-0.71
-0.89
13
200
50
760
Max
-
-
-
-100
-100
-100
-
-
-
-
-
-80
-200
-330
-1.0
-1.0
20
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -80V
VEB = -5.6V
VCE = -80V
IC = -10mA, VCE = -10V
IC = -0.1A, VCE = -10V
IC = -0.5A, VCE = -10V
IC = -1A, VCE = -10V
IC = -1.5A, VCE = -10V
IC =- 0.1A, IB = -10mA
IC = -0.5A, IB = -50mA
IC = -1A, IB = -150mA
IC = -1A, VCE = -10V
IC = -1A, IB = -150mA
VCB= -10V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -50V, IC = -0.5A
IB1= IB2 = -50mA
FMMT723
Document Number: DS33240 Rev. 5- 2
4 of 7
www.diodes.com
December 2014
© Diodes Incorporated