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| FMMT722_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 70V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
FMMT722
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
-70
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
-70
Emitter-Base Breakdown Voltage
BVEBO
-7
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector Emitter Cutoff Current
ICES
-
300
300
Static Forward Current Transfer Ratio (Note 10)
hFE
175
40
-
-
-
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
-
-
Base-Emitter Turn-On Voltage(Note 10)
Base-Emitter Saturation Voltage(Note 10)
Output Capacitance
VBE(on)
-
VBE(sat)
-
Cobo
-
Transition Frequency
fT
150
Turn-On Time
Turn-Off Time
ton
-
toff
-
Notes: 10. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
Typ
-150
-125
-8.8
<1
<1
<1
470
450
275
60
10
-35
-135
-140
-175
-0.78
-0.94
14
200
40
700
Max
-
-
-
-100
-100
-100
-
-
-
-
-
-50
-200
-220
-260
-1.0
-1.05
20
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -60V
VEB = -5.6V
VCE= -60V
IC = -10mA, VCE = -5V
IC = -0.1A, VCE = -5V
IC = -1A, VCE = -5V
IC = -1.5A, VCE = -5V
IC = -3A, VCE = -5V
IC =- 0.1A, IB = -10mA
IC = -0.5A, IB = -20mA
IC = -1A, IB = -100mA
IC = -1.5A, IB = -200mA
IC = -1.5A, VCE = -5V
IC = -1.5A, IB = -200mA
VCB = -10V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -50V, IC = -0.5A
IB1 = IB2 = -50mA
FMMT722
Document Number: DS33239 Rev. 4 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
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