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| FMMT718 Datasheet, PDF (4/7 Pages) Guangdong Kexin Industrial Co.,Ltd – Switching Transistor | |||
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A Product Line of
Diodes Incorporated
FMMT718
SOT23 PNP SILICON POWER (SWITCHING) TRANSISTOR
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 3)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
Min
-20
-20
-5
300
300
hFE
150
35
15
Collector-Emitter Saturation Voltage
(Note 3)
VCE(sat)
Base-Emitter Turn-On Voltage(Note 3)
Base-Emitter Saturation Voltage(Note 3)
Output Capacitance
VBE(on)
VBE(sat)
Cobo
Transition Frequency
fT
150
Turn-On Time
ton
Turn-Off Time
toff
Notes: 3. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%
Typ
-65
-55
-8.8
475
450
230
70
30
-16
-130
-145
-0.81
-0.87
21
180
40
670
Max
-100
-100
-100
-40
-200
-220
-1.0
-1.0
30
Unit
V
V
V
nA
ï nA
nA
mV
mV
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = -100 µA
IC = -10 mA
IE = -100 µA
VCB = -15V
VEB = -4V
VCE= -15V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -2A, VCE = -2V
IC = -4A, VCE = -2V
IC = -6A, VCE = -2V
IC =- 0.1A, IB = -10mA
IC = -1A, IB = -20mA
IC = -1.5A, IB = -50mA
IC = -2A, VCE = -2V
IC = -1.5A, IB = -50mA
VCB = -10V. f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC=-10V, IC =-1A
IB1 = IB2 = -20mA
FMMT718
Document Number DS31924 Rev. 2 - 2
4 of 7
www.diodes.com
August 2009
© Diodes Incorporated
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