FMMT717_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 12V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23

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FMMT717
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BV_CBO
-12
Collector-Emitter Breakdown Voltage (Note 10)
BV_CEO
-12
Emitter-Base Breakdown Voltage
BV_EBO
-7
Collector Cutoff Current
I_CBO
-
Emitter Cutoff Current
I_EBO
-
Collector Emitter Cutoff Current
I_CES
-
300
300
Static Forward Current Transfer Ratio (Note 10)
h_FE
180
60
45
-
-
Collector-Emitter Saturation Voltage (Note 10)
V_CE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 10)
V_BE(on)
-
Base-Emitter Saturation Voltage (Note 10)
V_BE(sat)
-
Output Capacitance
C_obo
-
Transition Frequency
f_T
80
Turn-On Time
Turn-Off Time
t_on
-
t_off
-
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typ
-35
-25
-8.5
-
-
-
475
450
275
100
70
-10
-100
-110
-180
-0.8
-0.9
21
110
70
130
Max
-
-
-
-100
-100
-100
-
-
-
-
-
-17
-140
-170
-220
-1.0
-1.0
30
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
I_C = -100µA
I_C = -10mA
I_E = -100µA
V_CB = -10V
V_EB = -5V
V_CE = -10V
I_C = -10mA, V_CE = -2V
I_C = -100mA, V_CE = -2V
I_C = -2.5A, V_CE = -2V
I_C = -8A, V_CE = -2V
I_C = -10A, V_CE = -2V
I_C = -0.1A, I_B = -10mA
I_C = -1A, I_B = -10mA
I_C = -1.5A, I_B = -50mA
I_C = -2.5A, I_B = -50mA
I_C = -2.5A, V_CE = -2V
I_C = -2.5A, I_B = -50mA
V_CB = -10V, f = 1MHz
V_CE = -10V, I_C = -50mA,
f = 100MHz
V_CC = -6V, I_C = -2A
I_B1 = I_B2 = 50mA
FMMT717
Document Number: DS33116 Rev. 5 - 2
4 of 7
www.diodes.com
October 2012
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