 English |
|
|
|
|
|
|
|
| FMMT634Q_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V NPN DARLINGTON TRANSISTOR IN SOT23 | |||
| |||
| ◁ |
A Product Line of
Diodes Incorporated
FMMT634Q
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Cut-off Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
Static Forward Current Transfer Ratio (Note 10)
hFE
Min
Typ
120
170
100
115
12
16
-
<1
-
<1
-
<1
-
50k
20k
60k
15k
40k
5k
14k
-
24k
-
600
-
-
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
-
-
-
-
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
VBE(sat)
-
VBE(on)
-
Transition Frequency
fT
-
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
-
t(on)
-
t(off)
-
Note:
10. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
0.67
0.72
0.75
0.82
0.68
0.85
1.5
1.33
140
9
290
2,400
Max
-
-
-
10
10
100
-
-
-
-
-
-
0.75
0.80
0.85
0.93
-
0.96
1.65
1.50
-
20
-
-
Unit
V
V
V
nA
nA
nA
-
V
V
V
MHz
pF
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 80V
VEB = 7V
VCES = 80V
IC = 10mA, VCE = 5V
IC = 100mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 1A, VCE = 2V
IC = 5A, VCE = 5V
IC = 100mA, IB = 1mA
IC = 250mA, IB = 1mA
IC = 500mA, IB = 5mA
IC = 900mA, IB = 5mA
IC = 900mA, IB = 5mA, TJ = +150°C
IC = 1A, IB = 5mA
IC = 1A, IB = 5mA
IC = 1A, VCE = 5V
IC = 50mA, VCE = 10V,
f = 100MHz
VCB = 10V, f = 1MHz
VCC = 20V, IC = 500mA,
IB1 = -IB2 = 1mA
FMMT634Q
Document number: DS37051 Rev. 1 - 2
4 of 7
www.diodes.com
March 2014
© Diodes Incorporated
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese