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FMMT620 Datasheet, PDF (4/7 Pages) Zetex Semiconductors – SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
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Diodes Incorporated
FMMT620
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 5)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
Min
100
80
7
−
−
−
200
300
hFE
110
60
20
−
Collector-Emitter Saturation Voltage (Note 5)
−
VCE(sat)
−
−
−
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
VBE(sat)
−
VBE(on)
−
Transition Frequency
fT
100
Collector Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
−
t(on)
−
t(off)
−
Notes: 5. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typ
180
110
8
−
−
−
450
450
170
90
30
10
15
45
145
160
0.86
0.82
160
11.5
86
1128
Max
−
−
−
100
100
100
−
900
−
−
−
−
20
60
185
200
1.0
0.95
−
18
−
−
Unit
V
V
V
nA
nA
nA
−
mV
V
V
MHz
pF
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 80V
VEB = 5.5V
VCES = 80V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 0.5A, IB = 50mA
IC = 1A, IB = 20mA
IC = 1.5A, IB = 50mA
IC = 1.5A, IB = 50mA
IC = 1.5A, VCE = 2V
IC = 50mA, VCE = 10V
f = 100MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 500mA
IB1 = IB2 = 25mA
FMMT620
Document number DS32123 Rev. 2 - 2
4 of 7
www.diodes.com
March 2010
© Diodes Incorporated
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