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| FMMT619TC Datasheet, PDF (4/7 Pages) Diodes Incorporated – 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
FMMT619
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Cut-off Current
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
Min Typ
50
190
50
65
7
8.3
-
-
-
-
-
-
200 400
300 450
200 400
100 225
-
40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
-
10
-
125
-
150
-
0.87
-
0.82
Transition Frequency
fT
100 165
Collector Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
-
12
-
170
-
750
Notes: 9. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
Max
-
-
-
100
100
100
-
-
-
-
-
20
200
220
1.0
1.0
-
20
-
-
Unit
Test Condition
V
IC = 100µA
V
IC = 10mA
V
IE = 100µA
nA VCB = 40V
nA VEB = 6V
nA VCES = 40V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
-
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
IC = 0.1A, IB = 10mA
mV IC = 1A, IB = 10mA
IC = 2A, IB = 50mA
V
IC = 2A, IB = 50mA
V
IC = 2A, VCE = 2V
MHz
pF
ns
ns
IC = 50mA, VCE = 10V,
f = 100MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 1A,
IB1 = -IB2 = 10mA
FMMT619
Document number: DS33236 Rev. 8 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
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