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| FMMT618_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
FMMT618
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
Min
BVCBO
20
BVCEO
20
BVEBO
7
ICBO
-
IEBO
-
ICES
-
200
hFE
300
200
100
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
-
VCE(sat)
-
-
VBE(sat)
-
VBE(on)
-
Transition Frequency
fT
100
Collector Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
-
t(on)
-
t(off)
-
Notes: 9. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
Typ
100
27
8.3
-
-
-
400
450
340
150
8
70
130
0.89
0.83
140
23
170
400
Max
-
-
-
100
100
100
-
-
-
-
15
150
200
1.0
1.0
-
30
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
MHz
pF
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB =20V
VEB = 4V
VCES =20V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
IC =0.1A, IB = 10mA
IC =1A, IB = 10mA
IC =2.5A, IB = 50mA
IC =2.5A, IB = 50mA
IC =2.5A, VCE = 2V
IC = 50mA, VCE = 10V,
f=100MHz
VCB = 10V, f=1MHz
VCC = 10V, IC = 1A,
IB1 = -IB2 = 10mA
FMMT618
Document number: DS33111 Rev. 5 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
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