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FMMT617_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 15V NPN LOW SATURATION TRANSISTOR IN SOT23
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Diodes Incorporated
FMMT617
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
Min
BVCBO
15
BVCEO
15
BVEBO
7
ICBO
-
IEBO
-
ICES
-
200
300
hFE
200
150
-
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
-
VCE(sat)
-
-
VBE(sat)
-
VBE(on)
-
Transition Frequency
fT
80
Collector Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
-
t(on)
-
t(off)
-
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typ
70
18
8.2
<1
<1
<1
415
450
320
240
80
8
70
150
0.9
0.84
120
30
120
160
Max
-
-
-
100
100
100
-
-
-
-
-
14
100
200
1.0
1.0
-
40
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
MHz
pF
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 10V
VEB = 5.6V
VCES = 10V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 12A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 1A, IB = 10mA
IC = 3A, IB = 50mA
IC = 3A, IB = 50mA
IC = 3A, VCE = 2V
IC = 50mA, VCE = 10V,
f = 50MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 3A,
IB1 = -IB2 = 50mA
FMMT617
Document number: DS36156 Rev. 4 - 2
4 of 7
www.diodes.com
January 2013
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