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FMMT597_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
-300
—
Collector-Emitter Breakdown Voltage (Note 8)
BVCEO
-300
—
Emitter-Base Breakdown Voltage
BVEBO
-7
-8.1
Collector-Base Cut-Off Current
ICBO
—
<1
Emitter-Base Cut-Off Current
IEBO
—
<1
Collector-Emitter Cut-Off Current
ICES
—
<1
100
—
Static Forward Current Transfer Ratio (Note 8)
hFE
100
—
100
—
Collector-Emitter Saturation Voltage (Note 8)
VCE(SAT)
—
—
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage (Note 8)
VBE(SAT)
—
—
VBE(ON)
—
—
Transition Frequency
fT
75
—
Output Capacitance
Cobo
—
—
Note:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
A Product Line of
Diodes Incorporated
FMMT597
Max
—
—
—
-100
-100
-100
—
300
—
-250
-250
-1000
-850
—
10
Unit
V
V
V
nA
nA
nA
—
mV
mV
mV
MHz
pF
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -250V
VEB = -4V
VCE = -250V
IC = -1mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
IC = - 50mA, IB = -5mA
IC = - 100mA, IB = -20mA
IC = -100mA, IB = -20mA
IC = -100mA, VCE = -10V
VCE = -10V, IC = -50mA,
f = 100MHz
VCB = -10V, f = 1MHz
FMMT597
Document number: DS33108 Rev. 4 - 2
4 of 7
www.diodes.com
November 2014
© Diodes Incorporated