FMMT591Q Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V PNP MEDIUM POWER TRANSISTOR IN SOT23

Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BV_CBO
-80
—
Collector-Emitter Breakdown Voltage (Note 9)
BV_CEO
-60
—
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
BV_EBO
-7
-8.1
I_CBO
—
<1
I_EBO
—
<1
Collector-Emitter Cut-Off Current
I_CES
—
<1
100
220
Static Forward Current Transfer Ratio (Note 9)
h_FE
100
80
175
155
15
40
Collector-Emitter Saturation Voltage (Note 9)
V_CE(SAT)
—
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
V_BE(SAT)
—
V_BE(ON)
—
-155
-295
965
830
Transition Frequency
f_T
150
—
Output Capacitance
C_obo
—
—
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
A Product Line of
Diodes Incorporated
FMMT591Q
Max
—
—
—
-100
-100
-100
—
300
—
—
-180
-350
-1200
-1000
—
10
Unit
V
V
V
nA
nA
nA
—
mV
mV
mV
MHz
pF
Test Condition
I_C = -100µA
I_C = -10mA
I_E = -100µA
V_CB = -60V
V_EB = -5.6V
V_CE = -50V
I_C = -1mA, V_CE = -5V
I_C = -500mA, V_CE = -5V
I_C = -1A, V_CE = -5V
I_C = -2A, V_CE = -5V
I_C = - 500mA, I_B = -50mA
I_C = - 1A, I_B = -100mA
I_C = -1A, I_B = -100mA
I_C = -1A, V_CE = -5V
V_CE = -10V, I_C = -50mA,
f = 100MHz
V_CB = -10V, f = 1MHz
FMMT591Q
Document number: DS37010 Rev. 1 - 2
4 of 7
www.diodes.com
March 2014
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