FMMT591ATC Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23

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Diodes Incorporated
FMMT591A
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BV_CBO
-40
⎯
Collector-Emitter Breakdown Voltage (Note 9) BV_CEO
-40
⎯
Emitter-Base Breakdown Voltage
BV_EBO
-7
⎯
Collector Cutoff Current
I_CBO
⎯
⎯
Collector-Emitter Cutoff Current
I_CES
⎯
⎯
Emitter Cutoff Current
I_EBO
⎯
⎯
⎯
⎯
Collector-Emitter Saturation Voltage (Note 9)
V_CE(sat)
⎯
⎯
Base-Emitter Saturation Voltage (Note 9)
V_BE(sat)
⎯
⎯
Base-Emitter Turn-On Voltage (Note 9)
V_BE(on)
⎯
⎯
300
⎯
300
Static Forward Current Transfer Ratio (Note 9)
h_FE
250
160
30
Transition Frequency
f_T
150
00
Output Capacitance
Switching Time
Delay Time
Rise Time
Storage Time
Fall Time
C_obo
⎯
⎯
t_(d)
⎯
34.9
t_(r)
⎯
19.2
t_(s)
⎯
249
t_(f)
⎯
62
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Max
⎯
⎯
⎯
-100
-100
-100
-200
-350
-500
-1.1
-1.0
⎯
800
⎯
⎯
⎯
⎯
10
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
nA
nA
mV
V
V
⎯
MHz
pF
Test Condition
I_C = -100μA
I_C = -10mA
I_E = -100μA
V_CB = -30V
V_CES = -30V
V_EB = -5.6V
I_C = -100mA, I_B = -1mA
I_C = -500mA, I_B = -20mA
I_C = -1A, I_B = -100mA
I_C = -1A, I_B = -100mA
I_C = -1A, V_CE = -5V
I_C = -1mA, V_CE = -5V
I_C = -100mA, V_CE = -5V
I_C = -500mA, V_CE = -5V
I_C = -1A, V_CE = -5V
I_C = -2A, V_CE = -5V
V_CE = -10V, I_C = -50mA,
f = 100MHz
V_CB = -10V, f = 1MHz
ns
V_CC = -10V, I_C = -500mA,
I_B1 = -I_B2 =-25mA
FMMT591A
Document number: DS33105 Rev. 5 - 2
4 of 7
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December 2013
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