FMMT591 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT591
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter
breakdown voltage
BV_CEO
Emitter-base breakdown BV_EBO
voltage
Collector cut-off current I_CBO
Collector – emitter current I_CES
cut-off current
Emitter cut-off current
I_EBO
Collector-emitter
saturation voltage
V_CE(sat)
Min.
-80
-60
-7
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on
voltage
V_BE(on)
Static forward current
h_FE
100
transfer ratio
100
80
15
Transition frequency
f_T
150
Typ. Max.
-8.1
<1 -100
<1 -100
<1
-155
-295
965
-100
-180
-350
-1200
830 -1000
220
175 300
155
40
Output capacitance
C_OBO
10
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Unit Conditions
V I_C = -100␮A
V _{IC = -10mA} ^(*)
V I_E = -100␮A
nA V_CB = -60V
nA
nA V_EB = -5.6V
mV _{IC = -0.5A, IB = -50mA}^(*)
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1A, VCE = -5V}^(*)
MHz
pF
I_C = -1mA, V_CE = -5V^(*)
I_C = -500mA, V_CE = -5V^(*)
I_C = -1A, V_CE = -5V
I_C = -2A, V_CE = -5V
I_C = -50mA, V_CE = -10V
f = 100MHz
V_CB = -10V, f = 1MHz^(*)
Issue 4 - September 2007
4
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