FMMT589_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 30V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23

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FMMT589
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV_CBO
-50

Collector-Emitter Breakdown Voltage (Note 8)
BV_CEO
-30

Emitter-Base Breakdown Voltage
BV_EBO
-7

Collector Cutoff Current
I_CBO


Collector-Emitter Cutoff Current
I_CES


Emitter Cutoff Current
I_EBO


ON CHARACTERISTICS (Note 8)
DC Current Gain
100

h_FE
100

80

40

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
V_CE(sat)
V_BE(sat)
V_BE(on)
C_obo












Current Gain-Bandwidth Product
f_T
100

Notes: 8. Measured under pulsed conditions. Pulse width  300µs. Duty cycle 2%
Max



-100
-100
-100

300


-0.25
-0.35
-0.65
-1.2
-1.1
15

Unit
Test Condition
V
I_C = -100μA
V
I_C = -10mA
V
I_E = -100μA
nA V_CB = -30V
nA V_CES = -30V
nA V_EB = -5.6V
I_C = -1mA, V_CE = -2V

I_C = -500mA, V_CE = -2V
I_C = -1A, V_CE = -2V
I_C = -2A, V_CE = -2V
I_C = -0.5A, I_B = -50mA
V
I_C = -1A, I_B = -100mA
I_C = -2A, I_B = -200mA
V
I_C = -1A, I_B = -100mA
V
I_C = -1A, V_CE = -2V
pF
MHz
V_CB = -10V, f = 1MHz
V_CE = -5V, I_C = -100mA,
f = 100MHz
FMMT589
Document number: DS33103 Rev. 7 - 2
4 of 7
www.diodes.com
November 2013
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