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FMMT589TA Datasheet, PDF (4/7 Pages) Diodes Incorporated – 30V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
FMMT589
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-50
ï¾
Collector-Emitter Breakdown Voltage (Note 8)
BVCEO
-30
ï¾
Emitter-Base Breakdown Voltage
BVEBO
-7
ï¾
Collector Cutoff Current
ICBO
ï¾
ï¾
Collector-Emitter Cutoff Current
ICES
ï¾
ï¾
Emitter Cutoff Current
IEBO
ï¾
ï¾
ON CHARACTERISTICS (Note 8)
DC Current Gain
100
ï¾ï
hFE
100
ï¾
80
ï¾
40
ï¾
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCE(sat)
VBE(sat)
VBE(on)
Cobo
ï¾ï
ï¾ï
ï¾ï
ï¾ï
ï¾
ï¾
ï¾
ï¾
ï¾ï
ï¾ï
ï¾
ï¾
Current Gain-Bandwidth Product
fT
100
ï¾
Notes: 8. Measured under pulsed conditions. Pulse width ï£ 300µs. Duty cycle ï£ï 2%
Max
ï¾
ï¾
ï¾
-100
-100
-100
ï¾ï
300
ï¾
ï¾
-0.25
-0.35
-0.65
-1.2
-1.1
15
ï¾
Unit
Test Condition
V
IC = -100μA
V
IC = -10mA
V
IE = -100μA
nA VCB = -30V
nA VCES = -30V
nA VEB = -5.6V
IC = -1mA, VCE = -2V
ï¾
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
IC = -0.5A, IB = -50mA
V
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
V
IC = -1A, IB = -100mA
V
IC = -1A, VCE = -2Vï
pF
MHz
VCB = -10V, f = 1MHz
VCE = -5V, IC = -100mA,
f = 100MHz
FMMT589
Document number: DS33103 Rev. 7 - 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
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