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FMMT560_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 500V PNP HIGH VOLTAGE TRANSISTOR | |||
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FMMT560
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 8)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Min Typ
-500
â
-500
â
-7
â
â
â
â
â
100
â
80
â
â
15
Collector-Emitter Saturation Voltage (Note 8)
VCE(SAT)
â
â
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage (Note 8)
Output Capacitance
VBE(SAT)
VBE(ON)
COBO
â
â
â
â
â
â
Transition Frequency
fT
60
â
Turn-On Time
Turn-Off Time
tON
â
110
tOFF
â
1.5
Note:
8. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
Max
â
â
â
-100
-100
300
300
â
-200
-500
-0.9
-0.9
8
â
â
â
Unit
V
V
V
nA
nA
â
mV
V
V
pF
MHz
ns
µs
Test Condition
IC = -100µA
IC = -1mA
IE = -100µA
VCB = -500V
VEB = -5V
IC = -1mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
IC = - 20mA, IB = -2mA
IC = - 50mA, IB = -10mA
IC = -50mA, IB = -10mA
IC = -50mA, VCE = -10V
VCB = -20V, f = 1MHz
VCE = -20V, IC = -10mA,
f = 50MHz
VCE = -100V, IC = -50mA,
IB1 = -5mA, IB2 = 10mA
FMMT560
Document Number: DS33102 Rev. 7 - 2
4 of 7
www.diodes.com
January 2016
© Diodes Incorporated
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