FMMT560Q_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

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Diodes Incorporated
FMMT560Q
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
Min Typ
-500
—
-500
—
-7
—
—
—
—
—
100
—
80
—
—
15
Collector-Emitter Saturation Voltage (Note 9)
V_CE(sat)
—
—
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Output Capacitance
V_BE(sat)
V_BE(on)
C_obo
—
—
—
—
—
—
Transition Frequency
f_T
60
—
Turn-On Time
Turn-Off Time
t_on
—
110
t_off
—
1.5
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Max
—
—
—
-100
-100
300
300
—
-200
-500
-0.9
-0.9
8
—
—
—
Unit
V
V
V
nA
nA
—
mV
V
V
pF
MHz
ns
µs
Test Condition
I_C = -100µA
I_C = -1mA
I_E = -100µA
V_CB = -500V
V_EB = -5V
I_C = -1mA, V_CE = -10V
I_C = -50mA, V_CE = -10V
I_C = -100mA, V_CE = -10V
I_C = - 20mA, I_B = -2mA
I_C = - 50mA, I_B = -10mA
I_C = -50mA, I_B = -10mA
I_C = -50mA, V_CE = -10V
V_CB = -20V, f = 1MHz
V_CE = -20V, I_C = -10mA,
f = 50MHz
V_CE = -100V, I_C = -50mA,
I_B1 = -5mA, I_B2 = 10mA
FMMT560Q
Document Number: DS37020 Rev. 1 - 2
4 of 7
www.diodes.com
March 2014
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