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| FMMT558_13 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
FMMT558
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(on)
VBE(sat)
Cobo
Min Typ
-400
-
-400
-
-7
-
-
-
-
-
-
-
100
-
100
-
15
-
-
-
-
-
-
-
-
-
-
-
Transition Frequency
fT
50
-
Turn-On Time
Turn-Off Time
ton
-
toff
-
Notes: 9. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
95
1600
Max
-
-
-
-100
-100
-100
-
300
-
-200
-500
-0.9
-0.9
5
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -1mA
IE = -100µA
VCB = -320V
VEB = -5.6V
VCE = -320V
IC = -1mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
IC = -20mA, IB = -2mA
IC = -50mA, IB = -6mA
IC = -50mA, VCE = -10V
IC = -50mA, IB = -5mA
VCB = -20V, f = 1MHz
VCE = -20V, IC = -10mA,
f = 20MHz
VCE = -100V, IC = -50mA
IB1 = 5mA, IB2 = -10mA
FMMT558
Datasheet Number: DS33101 Rev. 5 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
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