FMMT495_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT495
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(SAT)
VBE(ON)
VBE(SAT)
COBO
Min Typ
170
—
150
—
7
—
—
—
—
—
—
—
100
—
100
—
50
—
10
—
—
—
—
—
—
—
—
—
—
—
Transition Frequency
fT
100
—
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
—
—
—
100
100
100
—
300
—
—
0.2
0.3
1.0
1.0
10
—
Unit
V
V
V
nA
nA
nA
—
V
V
V
pF
MHz
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 150V
VEB = 5V
VCE = 150V
IC = 1mA, VCE = 10V
IC = 250mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 1A, VCE = 10V
IC = 250mA, IB = 25mA
IC = 500mA, IB = 50mA
IC = 500mA, VCE = 10V
IC = 500mA, IB = 50mA
VCB = 10V, f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
FMMT495
Document number: DS33096 Rev. 5 - 2
4 of 7
www.diodes.com
January 2016
© Diodes Incorporated