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FMMT493_15 Datasheet, PDF (4/7 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors
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FMMT493
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
120
—
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
100
—
Emitter-Base Breakdown Voltage
BVEBO
7
—
Collector Cutoff Current
ICBO
—
—
Emitter Cutoff Current
Collector Emitter Cutoff Current
IEBO
—
—
ICES
—
—
100
—
Static Forward Current Transfer Ratio (Note 9)
hFE
100
60
—
—
20
—
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
—
—
Base-Emitter Turn-On Voltage(Note 9)
Base-Emitter Saturation Voltage(Note 9)
Output Capacitance
VBE(on)
—
—
VBE(sat)
—
—
Cobo
—
—
Transition Frequency
fT
150
—
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
—
—
—
100
50
100
—
300
—
—
300
600
1.0
1.15
10
—
Unit
V
V
V
nA
nA
nA
—
mV
mV
V
V
pF
MHz
Test Condition
IC = 100µA
IC = 1mA
IE = 100µA
VCB = 100V
VEB = 5.6V
VCE = 100V
IC = 1mA, VCE = 10V
IC = 250mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 1A, VCE = 10V
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
IC = 1A, VCE = 10V
IC = 1A, IB = 100mA
VCB = 10V, f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
FMMT493
Document number: DS33093 Rev. 4 - 2
4 of 7
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April 2013
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