FMMT491 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT491
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter
breakdown voltage
BV_CEO
Emitter-base breakdown BV_EBO
voltage
Collector cut-off current I_CBO
Collector – emitter current I_CES
cut-off current
Emitter cut-off current
I_EBO
Collector-emitter
saturation voltage
V_CE(sat)
Min.
80
60
7
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on
voltage
V_BE(on)
Static forward current
h_FE
100
transfer ratio
100
80
30
Transition frequency
f_T
150
Typ.
8.1
<1
<1
<1
100
160
965
830
140
150
120
40
Max.
100
100
100
150
250
1100
1000
300
Output capacitance
C_OBO
10
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Unit Conditions
V I_C = 100␮A
V _{IC = 10mA} ^(*)
V I_E = 100␮A
nA V_CB = 60V
nA
nA V_EB = 5.6V
mV _{IC = 0.5A, IB = 50mA}^(*)
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, VCE = 5V}^(*)
MHz
pF
I_C = 1mA, V_CE = 5V^(*)
I_C = 500mA, V_CE = 5V^(*)
I_C = 1A, V_CE = 5V
I_C = 2A, V_CE = 5V
I_C = 50mA, V_CE = 10V
f = 100MHz
V_CB = -10V, f = 1MHz^(*)
Issue 5 - November 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com