FMMT459_15 Datasheet, PDF (4/7 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Emitter-Base Breakdown Voltage (Reverse Blocking)
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
Symbol
BV_CBO
BV_CEV
BV_CEO
BV_EBO
BV_ECV
I_CBO
I_EBO
I_CES
h_FE
V_CE(sat)
V_BE(on)
V_BE(sat)
C_obo
f_T
t_on
t_off
Min
Typ
500
700
500
700
450
500
7
8.1
6
8.1
—
<10
—
<10
—
<10
50
120
—
70
—
60
—
70
—
0.71
—
0.76
—
—
50
—
—
113
—
3450
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
A Product Line of
Diodes Incorporated
FMMT459
Max
—
—
—
—
—
100
100
100
—
—
75
90
0.9
0.9
5
—
—
—
Unit
V
V
V
V
V
nA
nA
nA
—
mV
mV
V
V
pF
MHz
ns
ns
Test Condition
I_C = 100µA
I_C = 10µA; 0.3V > V_BE > -1V
I_C = 1mA
I_E = 100µA
I_C = 1µA; 0.3V > V_BC > -6V
V_CB = 450V
V_EB = 5.6V
V_CE = 450V
I_C = 30mA, V_CE = 10V
I_C = 50mA, V_CE = 10V
I_C = 20mA, I_B = 2mA
I_C = 50mA, I_B = 6mA
I_C = 50mA, V_CE = 10V
I_C = 50mA, I_B = 5mA
V_CB = 20V, f = 1MHz
V_CE = 20V, I_C = 10mA,
f = 20MHz
V_C = 100V, I_C = 50mA
I_B1 = 5mA, I_B2 = -10mA
FMMT459
Document number: DS33089 Rev. 7 - 2
4 of 7
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March 2014
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